MOS transistor device

Details MOS transistor device MOS transistor device

2004-11-24

2009-11-03

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29260

Reexamination Certificate

active

07612408

ABSTRACT:
The invention relates to a MOS transistor device of the trench type, in which, in a semiconductor region of a first conductivity type, within a deep gate trench extending in the vertical direction of the semiconductor region, a vertical gate electrode and a gate oxide with a field plate step insulating the latter are formed and, in an adjoining mesa region outside and laterally with respect to the deep trench, at the upper section thereof, a source electrode region of the first conductivity type and a body region of a second conductivity type with one or a plurality of assigned body contact are formed, a drain electrode region of the first conductivity type lying opposite the deep trench in the vertical direction. The MOS transistor has a deep body reinforcement of the second conductivity type below the body region at the location of the body contact, said body reinforcement lying deeper than the field plate step.

REFERENCES:
patent: 6285060 (2001-09-01), Korec et al.
patent: 6462376 (2002-10-01), Wahl et al.
patent: 2001/0023961 (2001-09-01), Hshieh et al.
patent: 2003/0020134 (2003-01-01), Werner et al.
patent: 2003/0173618 (2003-09-01), Zundel et al.
patent: 1 168 455 (2001-06-01), None

Affiliated with

Also associated with

Rating

MOS transistor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS transistor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4069188