MOS transistor circuit and voltage-boosting booster circuit

Details MOS transistor circuit and voltage-boosting booster circuit MOS transistor circuit and voltage-boosting booster circuit

2008-01-29

2008-01-29

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S342000, C257S345000, C257S349000, C257S350000, C257S355000, C257S356000, C257S358000, C257S360000, C257S363000, C257S368000, C257S371000, C257S372000, C257S382000

Reexamination Certificate

active

10924507

ABSTRACT:
To an output of an NMOS having one end connected to a power source, a capacitor and a PMOS are connected. A capacitor is connected to the output of the PMOS. The NMOS and the PMOS are turned on alternately. A pulse is applied to other end of the capacitor which is connected to the output of the NMOS, to shift the output of the NMOS for boosting. Then, a back gate of the NMOS is connected, via a PMOS in an on state, to the power source. With this structure, the PMOS provides a resistor component when the output terminal short-circuits.

REFERENCES:
patent: 4647956 (1987-03-01), Shrivastava et al.
patent: 5270565 (1993-12-01), Lee et al.
patent: 5311048 (1994-05-01), Takahashi et al.
patent: 5338986 (1994-08-01), Kurimoto
patent: 5477413 (1995-12-01), Watt
patent: 5581103 (1996-12-01), Mizukami
patent: 5594611 (1997-01-01), Consiglio et al.
patent: 6043540 (2000-03-01), Matsui et al.
patent: 6299185 (2001-10-01), Chen
patent: 6437407 (2002-08-01), Ker et al.
patent: 6501137 (2002-12-01), Yu et al.
patent: 6621108 (2003-09-01), Tashiro et al.
patent: 6740934 (2004-05-01), Lee et al.
patent: 6756642 (2004-06-01), Lee et al.
patent: 6833590 (2004-12-01), Makita et al.
patent: 6864543 (2005-03-01), Kaneko et al.
patent: 6867637 (2005-03-01), Miyazaki et al.
patent: 6917095 (2005-07-01), Wong et al.
patent: 6982406 (2006-01-01), Chen
patent: 7012307 (2006-03-01), Lin et al.
patent: 2002/0031882 (2002-03-01), Uchida
patent: 2002/0105021 (2002-08-01), Myono et al.
patent: 2003/0112056 (2003-06-01), Tanzawa et al.
patent: 2003/0143964 (2003-07-01), Otsuka et al.
patent: 2004/0251484 (2004-12-01), Miyazaki et al.
patent: 2005/0063112 (2005-03-01), Negishi et al.
patent: 2005/0281119 (2005-12-01), Shibata et al.
patent: 2006/0071653 (2006-04-01), Gattiker et al.
patent: 7-298607 (1995-11-01), None
English Patent Abstract for 7-298607 from esp@cenet, published Nov. 10, 1995.

Affiliated with

Also associated with

Rating

MOS transistor circuit and voltage-boosting booster circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS transistor circuit and voltage-boosting booster circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor circuit and voltage-boosting booster circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3912437