MOS transistor circuit

Static information storage and retrieval – Read/write circuit – Differential sensing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365208, G11C 1300

Patent

active

049072013

ABSTRACT:
In a MOS transistor circuit (comprising a pair of current mirror circuits, each comprising: first and second MOS transistors having their gate electrodes connected together third and fourth MOS transistors respectively connected in series with the first and second transistors, the third and the fourth MOS transistors of the pair of current mirror circuits receiving a pair of complementary signals at their gate electrodes; and the nodes between the second and the fourth MOS transistors forming output nodes of the current mirror circuit), a pair of capacitors each coupling the output of one current mirror circuit to the gate electrodes of the first and the second MOS transistors of the other current mirror circuit. This provides positive feedback. The change in the outputs responsive to change in the inputs is thereby accelerated.

REFERENCES:
patent: 4767942 (1988-08-01), Minami et al.
patent: 4825418 (1989-04-01), Itoh et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

MOS transistor circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS transistor circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor circuit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-53699

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.