MOS transistor capable of withstanding significant currents

Details MOS transistor capable of withstanding significant currents MOS transistor capable of withstanding significant currents

2007-12-26

2010-11-09

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S342000

Reexamination Certificate

active

07829958

ABSTRACT:
A MOS transistor capable of withstanding significant currents, having doped areas corresponding to first and second main terminals of elementary MOS transistors and having, in top view, the shape of parallel strips separated by gate regions; first conductive elements which do not extend on the doped areas corresponding to the second main terminals and dividing into first fingers extending at least partly on the doped areas corresponding to the first main terminals and connected thereto; and second conductive elements which do not extend on the doped areas corresponding to the first main terminals and divide into second fingers extending at least partly on the doped areas corresponding to the second main terminals and connected thereto, the second fingers being at least partly intercalated with the first fingers.

REFERENCES:
patent: 4298879 (1981-11-01), Hirano
patent: 5283452 (1994-02-01), Shih et al.
patent: 5614762 (1997-03-01), Kanamori et al.
patent: 7446417 (2008-11-01), Yoshioka
patent: 2002/0167088 (2002-11-01), Hoshino et al.
patent: 2004/0048463 (2004-03-01), Haematsu
patent: 61104674 (1986-05-01), None
patent: 2004096118 (2004-03-01), None
French Search Report from corresponding French Application No. 06/55981 filed Dec. 27, 2006.

Affiliated with

Also associated with

Rating

MOS transistor capable of withstanding significant currents does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS transistor capable of withstanding significant currents, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor capable of withstanding significant currents will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4246287