MOS transistor and method of manufacturing thereof

Details MOS transistor and method of manufacturing thereof MOS transistor and method of manufacturing thereof

1995-06-07

1997-11-04

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 257339, 257389, H01L 2978

Patent

active

056843178

ABSTRACT:
A thick oxide layer is formed over a drain region of an MOS transistor while a thin oxide layer is provided over the source and channel regions. As a result both improved current driving ability and reduced gate induced drain leakage current are achieved.

REFERENCES:
patent: 4288801 (1981-09-01), Ronen
patent: 4748134 (1988-05-01), Holland et al.
patent: 5126809 (1992-06-01), Hirai
patent: 5172196 (1992-12-01), Matsukawa et al.

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