Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-12
2009-08-18
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29256, C257SE21417, C438S294000
Reexamination Certificate
active
07576387
ABSTRACT:
The MOS transistor (1) of the invention comprises a gate electrode (10), a channel region (4), a drain contact region (6) and a drain extension region (7) mutually connecting the channel region (4) and the drain contact region (6). The MOS transistor (1) further comprises a shield layer (11) which extends over the drain extension region (7) wherein the distance between the shield layer (11) and the drain extension region (7) increases in a direction from the gate electrode (10) towards the drain contact region (6). In this way the lateral breakdown voltage of the MOS transistor (1) is increased to a level at which the MOS transistor (1) may fulfill the ruggedness requirement for broadcast applications for a supply voltage higher than that used in base station applications.
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Fujishima, N; et al “A 700V Leteral Power MOSFET With Narrow Gap Double Metal Field Plates Realizing Low on-Resistance and Long-Term Stability of Performance” Proceedings of the 13th International Symposium on Power Semiconductor Devices and ICS (ISPSD '01), Osaka, JP, Jun. 7, 2001, pp. 255-258.
De Boet Johannes Adrianus Maria
Klappe Jos Gerjan Eusebius
Theeuwen Stephan Jo Cecil Henri
Dang Trung
NXP B.V.
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