MOS transistor and method for producing a MOS transistor...

Details MOS transistor and method for producing a MOS transistor... MOS transistor and method for producing a MOS transistor...

2007-03-28

2009-10-13

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S311000, C438S197000, C438S479000, C438S517000, C438S510000, C257SE27112

Reexamination Certificate

active

07601568

ABSTRACT:
A MOS transistor, and a method for producing the same, is provided with a source region, a gate-region, a drain region, and a drift region in an SOI wafer. The SOI-wafer has a carrier layer, which carries an insulating intermediate layer, and whereby the insulating intermediate layer carries an active semiconductor layer, in which laterally different doping material concentrations define the source region, the drift region, and the drain region. Whereby, the active semiconductor layer, at least in a portion of the drift region, is thicker than in the source region. The MOS transistor is characterized in that the active semiconductor layer, in a vertical direction, is completely separated by the insulating intermediate layer from the carrier layer.

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