MOS transistor and method for producing a MOS transistor...

Details MOS transistor and method for producing a MOS transistor... MOS transistor and method for producing a MOS transistor...

2007-06-19

2007-06-19

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000

Reexamination Certificate

active

11045387

ABSTRACT:
A MOS transistor, and a method for producing the same, is provided with a source region, a gate-region, a drain region, and a drift region in an SOI wafer. The SOI-wafer has a carrier layer, which carries an insulating intermediate layer, and whereby the insulating intermediate layer carries an active semiconductor layer, in which laterally different doping material concentrations define the source region, the drift region, and the drain region. Whereby, the active semiconductor layer, at least in a portion of the drift region, is thicker than in the source region. The MOS transistor is characterized in that the active semiconductor layer, in a vertical direction, is completely separated by the insulating intermediate layer from the carrier layer.

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