MOS transistor and method for fabricating the same

Details MOS transistor and method for fabricating the same MOS transistor and method for fabricating the same

2005-04-12

2005-04-12

Smith, Matthew (Department: 2825)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000, C257S402000, C438S174000, C438S289000

Reexamination Certificate

active

06879006

ABSTRACT:
A method for fabricating a CMOS transistor is disclosed. The present invention provides a method for producing a CMOS transistor having enhanced performance since a short channel characteristic and operation power can be controlled by the duplicate punch stop layer of the pMOS region and the operation power of the nMOS is also controlled by dopant concentration of the duplicated LDD region combined by the first LDD region and the second LDD region.

REFERENCES:
patent: 5500379 (1996-03-01), Odake et al.
patent: 5594264 (1997-01-01), Shirahata et al.
patent: 6469347 (2002-10-01), Oda et al.
patent: 2000-67076 (2000-11-01), None

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