MOS transistor and manufacturing method thereof

Details MOS transistor and manufacturing method thereof MOS transistor and manufacturing method thereof

2009-06-02

2010-06-08

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21619, C257SE21634, C438S197000

Reexamination Certificate

active

07732871

ABSTRACT:
Disclosed are a MOS transistor having a low resistance ohmic contact characteristic and a manufacturing method thereof capable of improving a drive current of the MOS transistor. A gate oxide layer, a gate electrode, and a spacer are formed on a silicon substrate, and a silicon carbide layer is deposited thereon. A photolithography process is performed, and the silicon carbide layer is etched except for predetermined portions corresponding to source-drain regions and the gate electrode. Then, a metal layer is formed on the resulting structure after performing a source-drain ion implantation process. The metal layer is heated to form a salicide layer on the gate electrode and the source-drain diffusion regions. Then, the unreacted metal layer is removed, thereby forming the MOS transistor.

REFERENCES:
patent: 2004/0041179 (2004-03-01), Mizushima et al.
patent: 2005/0079691 (2005-04-01), Kim et al.
patent: 2005/0079692 (2005-04-01), Samoilov et al.
patent: 2007/0138482 (2007-06-01), Tanimoto

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