MOS transistor and ESD protective device each having a...

Details MOS transistor and ESD protective device each having a... MOS transistor and ESD protective device each having a...

2007-04-10

2007-04-10

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S549000, C257S550000, C257S408000

Reexamination Certificate

active

10903027

ABSTRACT:
A MOS transistor includes a drain zone, a source zone, and a gate electrode. Doping atoms of the first conductivity type are implanted in the region of the drain zone and the source zone by at least two further implantation steps such that a pn junction between the drain zone and a substrate region is vertically shifted and a voltage ratio of the MOS transistor between a lateral breakdown voltage and a vertical breakdown voltage can be set.

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Warren R. Anderson et al.: ,,ESD Protection for Mixed-Voltage I/O Using NMOS Transistors Stacked in a Cascade Configuration,Proceedings of the EOS/ESD Symposium 1998, pp. 54-63.

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