Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-02-22
1993-04-06
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257401, 257409, H01L 2701
Patent
active
052006379
ABSTRACT:
A MOS transistor includes a gate electrode layer formed on an insulation layer which is formed on an element formation region defined by a field insulation layer formed on a P-type semiconductor substrate. The gate electrode layer has first and second openings formed therein. Further, N-type impurity diffusion regions acting as the drain and source of the MOS transistor are formed in those portions of the surface area of the semiconductor substrate which lie under the first and second openings.
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Kasai Kazuhiko
Matsuo Kenji
Noine Yasukazu
Bowers Courtney A.
James Andrew J.
Kabushiki Kaisha Toshiba
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