MOS transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S365000

Reexamination Certificate

active

10971828

ABSTRACT:
The present invention relates to a MOS transistor which is capable of compensating the shortcomings of the conventional MOS transistor having three gate electrodes. In order to achieve the object the MOS transistor of the present invention is characterized in that the sidewall gates are made of material having an energy band gap higher than that of the material constituting the main gate or the sidewall gates are implanted with holes (or positive charges) or electrons (or negative charges). The MOS transistor of the present invention includes a gate dielectric layer formed on a semiconductor substrate at a predetermined width, a main gate formed onto a middle of the gate dielectric layer at a width narrower than that of the gate dielectric layer, sidewall insulators formed on both sides of the main gate, sidewall gates formed on the sidewall insulators and the gate dielectric layer extended outward the main gate, the sidewall gates being injected by holes or electrons, and source/drain regions formed outward the sidewall gates within the semiconductor substrate.

REFERENCES:
patent: 5047816 (1991-09-01), Cuevas
patent: 5920085 (1999-07-01), Han et al.
patent: 6060346 (2000-05-01), Roh et al.
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6262445 (2001-07-01), Swanson et al.
patent: 6388293 (2002-05-01), Ogura et al.
patent: 6563151 (2003-05-01), Shin et al.
patent: 6613637 (2003-09-01), Lee et al.
patent: 6734510 (2004-05-01), Forbes et al.
patent: 2004/0185630 (2004-09-01), Forbes et al.
patent: 10-1999-49782 (1999-07-01), None
Hiromasa NODA et al.; Threshold Voltage Controlled 0.1-um MOSFET Utilizing Inversion Layer as Extreme Shallow Source/Drain; IEDM 93, Tech. Dig., pp. 123 to 126; Published in 1993.
Abstract of Korean Patent Publication: MOSFET Device in Which a Spacer of a Gate Poly is Solicided and Method for Manufacturing the Same: Application No. 10-1997-0088779; Publication Date Jul. 5, 1999.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

MOS transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3872957

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.