MOS thin film transistor having high breakdown voltage

Details MOS thin film transistor having high breakdown voltage MOS thin film transistor having high breakdown voltage

1993-07-23

1996-02-27

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 59, 257 72, 257366, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

054951194

ABSTRACT:
A MOS TFT includes a back gate electrode of a silicide formed on an underlying insulating layer, and a polysilicon layer deposited on the underlying insulating layer so as to completely cover the back gate electrode. A gate oxide and a gate electrode are formed on the polysilicon layer in the named order and positioned above the back gate electrode. In alignment with the gate oxide and the gate electrode, a pair of high concentration source/drain regions are formed in the polysilicon layer, so that a channel is formed by a portion of the polysilicon layer under the gate oxide. The whole is coated with a CVD oxide silicon protection film, and a source/drain electrode is formed to contact to each of the source/drain regions through a contact hole formed through the oxide silicon protection film. By fixing a potential of the back gate, a source-drain breakdown voltage can be considerably increased.

REFERENCES:
patent: 3470610 (1969-10-01), Breitweiser
patent: 4528480 (1985-07-01), Unagami et al.
patent: 4974056 (1990-11-01), Brodsky et al.
patent: 5079606 (1992-01-01), Yamamura et al.
patent: 5140391 (1992-08-01), Hayashi et al.
patent: 5278102 (1994-01-01), Horie

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