MOS technology power device with low output resistance and low c

Details MOS technology power device with low output resistance and low c MOS technology power device with low output resistance and low c

1996-11-04

1999-05-04

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, 257139, 257342, 257345, 257378, 257401, 438 37, 438156, 438185, 438209, 438217, H01L 2962

Patent

active

059006625

ABSTRACT:
A MOS-gated power device includes a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type having a first resistivity value. Under each body region a respective lightly doped region of the second conductivity type is provided having a second resistivity value higher than the first resistivity value.

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