Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-05-28
2000-08-29
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257329, 257341, 257380, 257384, 257412, 438156, 438268, 438514, 438586, 438647, 438652, 438694, H01L 2972
Patent
active
061112976
ABSTRACT:
A MOS-technology power device integrated structure includes a first plurality of elongated doped semiconductor stripes of a first conductivity type formed in a semiconductor layer of a second conductivity type, each including an elongated source region of the first conductivity type, an annular doped semiconductor region of the first conductivity type formed in the semiconductor layer and surrounding and merged with the elongated stripes, insulated gate stripes extending over the semiconductor layer between adjacent elongated stripes, a plurality of conductive gate fingers extending over and electrically connected to the insulated gate stripes, and a plurality of source metal fingers, each one extending over a respective elongated stripe and contacting the elongated stripe and the respective elongated source region, so that the source metal fingers and the conductive gate fingers are interdigitated.
REFERENCES:
patent: 4015278 (1977-03-01), Fukuta
patent: 4055884 (1977-11-01), Jambotkar
patent: 4072975 (1978-02-01), Ishitani
patent: 4145700 (1979-03-01), Jambotkar
patent: 4344081 (1982-08-01), Pao et al.
patent: 4345265 (1982-08-01), Blanchard
patent: 4376286 (1983-03-01), Lidow
patent: 4399449 (1983-08-01), Herman et al.
patent: 4412242 (1983-10-01), Herman et al.
patent: 4414560 (1983-11-01), Lidow
patent: 4593302 (1986-06-01), Lidow
patent: 4605948 (1986-08-01), Martinelli
patent: 4642666 (1987-02-01), Lidow et al.
patent: 4680853 (1987-07-01), Lidow
patent: 4705759 (1987-11-01), Lidow et al.
patent: 4716126 (1987-12-01), Cogan
patent: 4798810 (1989-01-01), Blanchard et al.
patent: 4816882 (1989-03-01), Blanchard et al.
patent: 4901127 (1990-02-01), Chow et al.
patent: 4927772 (1990-05-01), Arthur et al.
patent: 4931408 (1990-06-01), Hshieh
patent: 4959699 (1990-09-01), Lidow et al.
patent: 4963972 (1990-10-01), Shinohe et al.
patent: 4974059 (1990-11-01), Kinzer
patent: 5008725 (1991-04-01), Lidow
patent: 5015593 (1991-05-01), Yawata et al.
patent: 5031009 (1991-07-01), Fujihira
patent: 5043781 (1991-08-01), Nishiura et al.
patent: 5119153 (1992-06-01), Korman et al.
patent: 5130767 (1992-07-01), Lidow et al.
patent: 5160985 (1992-11-01), Akiyama
patent: 5164804 (1992-11-01), Terashima
patent: 5191396 (1993-03-01), Lidow et al.
patent: 5208471 (1993-05-01), Mori et al.
patent: 5286984 (1994-02-01), Nakagawa et al.
patent: 5338961 (1994-08-01), Lidow et al.
patent: 5382538 (1995-01-01), Zambrano
patent: 5397728 (1995-03-01), Sasaki et al.
patent: 5418179 (1995-05-01), Hotta
patent: 5426320 (1995-06-01), Zambrano
patent: 5442216 (1995-08-01), Gough
patent: 5489799 (1996-02-01), Zambrano
patent: 5508217 (1996-04-01), Sawada
patent: 5563436 (1996-10-01), Barret et al.
patent: 5621234 (1997-04-01), Kato
patent: 5631483 (1997-05-01), Ferla et al.
patent: 5670392 (1997-09-01), Ferla et al.
patent: 5731604 (1998-03-01), Kinzer
European Search Report from European Patent Application 95830055.0, filed Feb. 24, 1995.
Patent Abstracts of Japan, vol. 014 No. 387 (E-0967), Aug. 21, 1990 & JP-A-02 143566 (Toshiba Corp.) Jun. 1, 1990.
European Search Report from European Patent Application 95830535.1, filed Dec. 22, 1995.
Mena J., et al., "High Frequency Performance of VDMOS Power Transistors", International Electron Devices Meeting. Technical Digest, Washington, D.C., USA, Dec. 8-10, 1980, 1980 New York, NY, USA.
Patent Abstracts of Japan, vol. 014, No. 387 (E-0967), Aug. 21, 1990 & JP-A-02 143566 (Toshiba Corp.).
Patent Abstracts of Japan, vol. 005, No. 040 (E-049), Mar. 17, 1981 & JP-A-55 163877 (Toshiba Corp.).
European Search Report from European Patent Application No. 9583045.5, filed Oct. 30, 1995.
European Search Report from European Patent Application 95830418.0, filed Oct. 9, 1996.
European Search Report from European Patent Application No. 95830468.5. filed Nov. 6, 1995.
European Search Report from European Patent Application No. 95830453.7, filed Oct. 30, 1995.
European Search Report from European Patent Application No. 95830542.7, filed Dec. 28, 1995.
Patent Abstracts of Japan, vol. 015, No. 422 (E-1131), Nov. 11, 1991 & JP-A-03 185737 (Toshiba Corp.).
Patent Abstracts of Japan, vol. 011, No. 231 (E-527), Jul. 28, 1987 & JP-A-62 047162 (Matsushita Electric Works Ltd.).
Patent Abstracts of Japan, vol. 014, No. 038 (E-878), Jan. 24, 1990 & JP-A-01 272163 (Fuji Electric Co. Ltd.).
Patent Abstracts of Japan, vol. 017, No. 039 (E-1311), Jan. 25, 1993 & JP-A-04 256367 (Hitachi Ltd.).
Patent Abstracts of Japan, vol. 017, No. 213 (E-1356), Apr. 26, 1993 & JP-A-04 349660 (Toshiba Corp.).
Patent Abstracts of Japan, vol. 008, No. 053 (E-231), Mar. 9, 1984 & JP-A-58 206174 (Tokyo Shibaura Denki KK ).
Semiconductor Science and Technology, Apr. 1993, UK, vol. 8, No. 4, oo 488-494, Galvagno G., et al. "Diffusion and Outdiffusion of Aluminum Implanted into Silicon".
Stanford Electronics Laboratories, Integrated Circuits Laboratory, Stanford University, Stanford, CA, Technical Report No. 4956-1, Mar. 1976, Michael Donald Pocha, "High Voltage Double Diffused MOS Transistors for Integrated Circuits" pp 229-240.
IEEE Journal of Solid-Staate Circuits, vol. SC-11, No. 4, Aug. 1976, Isao Yoshida, et al., "A High Power MOSFET With A Vertical Drain Electrode And A Meshed Gate Structure", pp 472-477.
Siliconix Technical Proposal in response to N.A.F.I., Solicitation #N00163-77-R-1197, Aug. 31, 1977, Labor And Materials to Design, Develop and Fabricate a 500V/2A N-Channel Metal Oxide Semiconductor F.E.T.
IEEE Transactions On Electron Devices, vol. ED-27, No. 2, Feb. 1980, S.C. Sun, et al., "Modeling Of The On-Resistance Of LDMOS, VDMOS, and VMOS Power Transistors", pp 356-367.
International Electron Devices Meeting--Tech. Digest, Dec. 8-10, 1980, Washington, D.C., pp 91-94, J. Mena, et al., "High Frequency Performance Of VDMOS Power Transistors.".
Solid State Electronics, vol. 27, No. 5, pp 419-432, 1984, P. McGregor, et al. "Small-Signal High-Frequency Performance Of Power MOS Transistors".
IEEE Transactions on Electron Devices, vol. ED-31, No. 1, Jan. 1984, pp 109-113, Jose G. Mena, et al., "Breakdown Voltage Design Considerations in VDMOS Structures".
Solid State Electronics, vol. 29, No. 6, pp. 647-656, 1986, Jose G. Mena, et al., "High-Voltage Multiple-Resistivity Drift-Region LDMOS".
Solid State Electronics, 1977, vol. 29, No. 875-878, Surinder Krishna, "Second Breakdown In High Voltage MOS Transistors".
Electronic Design, For Engineers and Engineering Managers--Worldwide, pp 8276-8282, "HEXFET, A New Power Technology Cuts On-Resistance, Boosts Ratings".
ICs and Semiconductors, pp 8272-8275.
Laid Open Patent Specification No. 85073/80, Laid Open Date: Jun. 26, 1980, Patent No. 75/162,677, Kanushiki Kaisha Hitachi Seisakusho, "Methods For Manufacturing Insulated Gate Type Field Effect Transistors".
Grimaldi Antonio
Schillaci Antonino
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Galanthay Theodore E.
Morris James H.
Wojciechowicz Edward
LandOfFree
MOS-technology power device integrated structure and manufacturi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOS-technology power device integrated structure and manufacturi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS-technology power device integrated structure and manufacturi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1252691