Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-02-22
1998-08-25
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257329, 257341, 257382, 257384, 257412, 438156, 438268, 438514, 438586, 438647, 438652, 438694, H01L 2976, H01L 21265
Patent
active
057985545
ABSTRACT:
A MOS-technology power device integrated structure includes a first plurality of elongated doped semiconductor stripes of a first conductivity type formed in a semiconductor layer of a second conductivity type, each including an elongated source region of the first conductivity type, an annular doped semiconductor region of the first conductivity type formed in the semiconductor layer and surrounding and merged with the elongated stripes, insulated gate stripes extending over the semiconductor layer between adjacent elongated stripes, a plurality of conductive gate fingers extending over and electrically connected to the insulated gate stripes, and a plurality of source metal fingers, each one extending over a respective elongated stripe and contacting the elongated stripe and the respective elongated source region, so that the source metal fingers and the conductive gate fingers are interdigitated.
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Grimaldi Antonio
Schillaci Antonino
Anastasi John N.
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Morris James H.
Wojciechowicz Edward
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