Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-12-23
1998-11-24
Ngo, Naan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257337, 257339, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058411674
ABSTRACT:
A MOS-gated power device integrated structure comprises a plurality of elementary units formed in a semiconductor material layer of a first conductivity type. Each elementary unit is formed in a body stripe of a second conductivity type. There are a plurality of body stripes of the second conductivity type extending substantially in parallel to each other and at least one source region of the first conductivity type disposed within each body stripe. A conductive gate layer is insulatively disposed over the semiconductor material layer between the body stripes in the form of a first web structure. A second web structure of the second conductivity type is formed in the semiconductor material layer and comprises an annular frame portion surrounding the plurality of bodystripes and at least one first elongated stripe extending between two sides of the annular frame portion in a direction substantially orthogonal to the body stripes and that is merged at each end with the annular frame portion. The body stripes are divided by the at least one first elongated stripe into at least two groups of body stripes, wherein one end of each body stripe is merged with the annular frame portion of the second conductivity type and the other end is merged with the at least one first elongated stripe. A conductive gate finger is insulatively disposed above the first elongated stripe and is part of the first web structure. A conductive gate ring surrounds the conductive gate layer and the conductive gate finger and completes the first web structure. A metal gate finger is disposed above the conductive gate finger and is merged at its ends with a metal gate ring structure disposed above the conductive gate ring to provide a third web structure. Source metal plates cover the at least two groups of body stripes and contact each source region and each body stripe to form a source electrode of the power device. A bottom surface of the semiconductor material layer forms a drain of the power device.
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Ferla Giuseppe
Frisina Ferruccio
Grimaldi Antonio
Schillaci Antonino
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Ngo Naan V.
SGS--Thomson Microelectronics S.r.l.
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