MOS switch that reduces clock feed through in a switched capacit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257298, 257320, 257346, 257300, H01L 2976

Patent

active

059006579

ABSTRACT:
The accumulation of a small positive charge on the source of a MOS switch which occurs after the switch has been turned off due to the parasitic capacitance that exists between the gate and the source of the transistor, known as clock feedthrough, is reduced by utilizing a split-gate MOS transistor, and by continuously biasing one of the gates of the split-gate transistor.

REFERENCES:
patent: 4794565 (1988-12-01), Wu et al.
patent: 5080317 (1998-09-01), Kuo
patent: 5115288 (1992-05-01), Manley
patent: 5461242 (1995-10-01), Muroaka et al.
patent: 5583810 (1996-12-01), Van Houdt et al.
patent: 5665987 (1997-09-01), Muroaka et al.
P.E. Allen et al., "CMOS Analog Circuit Design", Oxford University Press, Chap. 5, pp.204-211, (1987).

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