Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-19
1999-05-04
Whitehead, Jr., Carol
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257298, 257320, 257346, 257300, H01L 2976
Patent
active
059006579
ABSTRACT:
The accumulation of a small positive charge on the source of a MOS switch which occurs after the switch has been turned off due to the parasitic capacitance that exists between the gate and the source of the transistor, known as clock feedthrough, is reduced by utilizing a split-gate MOS transistor, and by continuously biasing one of the gates of the split-gate transistor.
REFERENCES:
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patent: 5080317 (1998-09-01), Kuo
patent: 5115288 (1992-05-01), Manley
patent: 5461242 (1995-10-01), Muroaka et al.
patent: 5583810 (1996-12-01), Van Houdt et al.
patent: 5665987 (1997-09-01), Muroaka et al.
P.E. Allen et al., "CMOS Analog Circuit Design", Oxford University Press, Chap. 5, pp.204-211, (1987).
National Semiconductor Corp.
Whitehead, Jr. Carol
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