MOS SRAM cell with open base bipolar loads

Details MOS SRAM cell with open base bipolar loads MOS SRAM cell with open base bipolar loads

1994-08-16

1995-09-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257903, 365154, 365177, 365182, H01L 2702

Patent

active

054536367

ABSTRACT:
An SRAM cell includes an open-base, bipolar transistor serving as a load device and one pull-down transistor having an associated leakage current. The amplification .beta. of the bipolar transistor controls the amount of load current through the bipolar transistor. The bipolar transistor provides the necessary load current to ensure the SRAM cell maintains its logic state.

REFERENCES:
patent: 5055904 (1991-10-01), Minami et al.
E. Seevinck et al., Static Noise Margin Analysis of MOS SRAM Cells, IEEE Journal of Solid State Circuits, vol. Sc-22, No. 5, pp. 748-754, Oct. 1987.
Stephen Flannagan, Future Technology Trends For Static Rams, 1988 IEEE International Electron Devices Meeting Technical Digest, pp. 40-43.

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