Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-09-08
1995-06-20
Loke, Steven Ho Vin
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257344, 257407, H01L 2976, H01L 2994
Patent
active
054263271
ABSTRACT:
A MOS-type semiconductor device having an LDD structure. The device includes a silicon substrate of a first conductivity type. An insulating film is formed on a main surface of the silicon substrate. A gate electrode made of polycrystalline silicon containing impurities at a first concentration is formed on the insulating film. Sidewall spacers made of polycrystalline silicon containing impurities at a second concentration different from the first concentration are formed at both sides of the gate electrode. Impurity diffusion layers are formed in the main surface of the semiconductor substrate at respective regions thereof where source and drain of the MOS-type semiconductor device are to be formed. Each of the impurity diffusion layers includes a low concentration diffusion layer disposed at a first portion of one of the regions and a high concentration diffusion layer disposed at a second portion other than the first portion of the one region. The first portion extends between a first end substantially corresponding to a side of the gate electrode contiguous with one of the sidewall spacers and a second end substantially corresponding to an outer side of the one sidewall spacer remote from the side of the gate electrode so that a boundary line between the first portion and the second portion is substantially aligned with the outer side of the one sidewall spacer.
REFERENCES:
patent: 4727038 (1988-02-01), Watabe et al.
patent: 4808544 (1989-02-01), Matsui
patent: 4868617 (1989-09-01), Chiao et al.
patent: 4971922 (1990-11-01), Watabe et al.
patent: 5031008 (1991-07-01), Yoshida et al.
patent: 5061975 (1991-10-01), Inuishi et al.
Loke Steven Ho Vin
Nippon Steel Corporation
LandOfFree
MOS semiconductor with LDD structure having gate electrode and s does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOS semiconductor with LDD structure having gate electrode and s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS semiconductor with LDD structure having gate electrode and s will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1846102