MOS semiconductor device with low ON resistance

Details MOS semiconductor device with low ON resistance MOS semiconductor device with low ON resistance

2006-03-17

2009-06-16

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257SE29134

Reexamination Certificate

active

07547946

ABSTRACT:
The semiconductor device1includes transistors10, 20.Each of the transistors10(first transistor) is a MOSFET, and includes source regions102, 106,a drain region104,and a gate electrode110.Each of the transistors20(second transistor) is also a MOSFET, and includes source regions202, 206,a drain region204,and a gate electrode210.The source region106of the transistor10and the source region202of the transistor20are the identical region in the semiconductor substrate90.In other words, the source region106and the source region202are shared by the both transistors.

REFERENCES:
patent: 6159841 (2000-12-01), Williams et al.
patent: 6917091 (2005-07-01), Inoue et al.
patent: 6927458 (2005-08-01), Worley
patent: 7015545 (2006-03-01), McKay et al.
patent: 7166898 (2007-01-01), Briere
patent: 2002/0105009 (2002-08-01), Eden et al.
patent: 61-51754 (1986-04-01), None

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