MOS semiconductor device

Details MOS semiconductor device MOS semiconductor device

1997-08-04

2000-03-14

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257406, 257411, H01L 2972

Patent

active

060376279

ABSTRACT:
A MOS semiconductor device comprises a semiconductor substrate having source and drain regions, a first insulating film disposed over the substrate in a space overlapping opposed edges of the source and drain regions, and a gate electrode disposed on the first insulating film. A second insulating film is disposed at overlapping portions between the gate electrode and the source and drain regions to prevent the formation of a space therebetween.

REFERENCES:
patent: 4057819 (1977-11-01), Owen et al.
patent: 4869781 (1989-09-01), Euen et al.
patent: 5495117 (1996-02-01), Larson
patent: 5734185 (1998-03-01), Iguchi et al.
patent: 5847427 (1998-12-01), Hagiwara

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