MOS programmable memories using a metal fuse link and process fo

Details MOS programmable memories using a metal fuse link and process fo MOS programmable memories using a metal fuse link and process fo

1986-12-05

1988-12-20

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156653, 156656, 156657, 1566591, 357 41, 357 49, 357 67, 357 71, 437 34, 437 56, 437 62, 437192, 437245, H01L 2978, H01L 2100, B44C 122, C23F 102

Patent

active

047928352

ABSTRACT:
A process for making a metal fuse link in a MOS or CMOS process which includes depositing a refractory metal or metal alloy over an already deposited multi-level oxide and patterning the deposited metal or metal alloy so that it has a fusing segment between and integral with expanded segments such that the length and cross sectional area of the fusing segment is sufficiently small so that the fusing current therethrough is less than 20 milliamperes. The fuse and surrounding circuitry is covered with a passivation layer and contacts formed in the passivation layer to the expanded segments.

REFERENCES:
patent: 4420504 (1983-12-01), Cooper et al.
patent: 4536948 (1985-08-01), Velde et al
patent: 4628590 (1986-12-01), Udo et al.
patent: 4647340 (1987-03-01), Szluk et al.

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