MOS power device with high integration density and...

Details MOS power device with high integration density and... MOS power device with high integration density and...

2006-08-15

2006-08-15

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000

Reexamination Certificate

active

07091558

ABSTRACT:
A MOS power device having: a body; gate regions on top of the body and delimiting therebetween a window; a body region, extending in the body underneath the window; a source region, extending inside the body region throughout the width of the window; body contact regions, extending through the source region up to the body region; source contact regions, extending inside the source region, at the sides of the body contact regions; a dielectric region on top of the source region; openings traversing the dielectric region on top of the body and source contact regions; and a metal region extending above the dielectric region and through the first and second openings.

REFERENCES:
patent: 5854099 (1998-12-01), Farrenkopf
patent: 2001/0050383 (2001-12-01), Hatade et al.
patent: 2002/0195654 (2002-12-01), Kwon
patent: 0810671 (1997-12-01), None
patent: 1058316 (2000-12-01), None
patent: 62150770 (1987-07-01), None
patent: 01084671 (1989-03-01), None
patent: WO 99/33119 (1999-07-01), None
European Search Report, 03425099.3, Aug. 14, 2003.

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