MOS memory circuit with fast access time

Details MOS memory circuit with fast access time MOS memory circuit with fast access time

1991-03-25

1992-07-21

Clawson, Jr., Joseph E.

Static information storage and retrieval

Read/write circuit

Including signal clamping

365203, 365204, 36523006, 3072966, 3072968, 307567, 307568, 323313, G11C 11401

Patent

active

051329360

ABSTRACT:
An improved MOS memory circuit using an MOS clamp circuit on the bitlines which turns on when the voltage on a bitline exceeds a predetermined voltage, thereby drawing current from the bitline to remove excess charge and return the bitline to the predetermined voltage. The clamp circuit of this invention allows prompt read access because reading is not substantially delayed by the excess bitline charge.

REFERENCES:
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patent: 4185321 (1980-01-01), Iwahashi et al.
patent: 4388537 (1983-06-01), Kanuma
patent: 4464590 (1984-08-01), Rapp
patent: 4473762 (1984-09-01), Iwahashi et al.
patent: 4516224 (1985-05-01), Aoyama
patent: 4901280 (1990-02-01), Patel
patent: 4905197 (1990-02-01), Urai
patent: 4939385 (1990-07-01), Dubujet
patent: 4984256 (1991-01-01), Imai

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