MOS LSI with projection structure

Details MOS LSI with projection structure MOS LSI with projection structure

1997-11-21

1998-10-27

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

257546, 257551, H01L 2708

Patent

active

058281193

ABSTRACT:
A semiconductor device having: a semiconductor substrate of a first conductivity type; a well formed in a surface of said semiconductor substrate, the welt being of a second conductivity type opposite to the first conductivity type; a first MOS transistor formed in a surface of a first conductivity type region of the semiconductor substrate; a second MOS transistor formed in a surface of the well; a wiring connected to the gate electrodes of the first and second MOS transistors; and a protection diode with a p-n junction formed in the first conductivity type region and comprising a second conductivity type region electrically connected to the wiring and the first conductivity region of the semiconductor substrate, wherein the wiring and the well are not directly connected electrically. A CMOS type semiconductor integrated circuit device with a long and wide area wiring is realized which can effectively suppress damage to a gate oxide film of a MOSFET.

REFERENCES:
patent: 3667009 (1972-05-01), Rugg
patent: 3712995 (1973-01-01), Steudel
patent: 5159518 (1992-10-01), Roy

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