MOS LSI with projection structure

Details MOS LSI with projection structure MOS LSI with projection structure

1998-08-07

1999-09-21

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257 48, 257203, H01L 2906, H02H 320

Patent

active

059557648

ABSTRACT:
A semiconductor device having: a semiconductor substrate of a first conductivity type; a well formed in a surface of said semiconductor substrate, the well being of a second conductivity type opposite to the first conductivity type; a first MOS transistor formed in a surface of a first conductivity type region of the semiconductor substrate; a second MOS transistor formed in a surface of the well; a wiring connected to the gate electrodes of the first and second MOS transistors; and a protection diode with a p-n junction formed in the first conductivity type region and comprising a second conductivity type region electrically connected to the wiring and the first conductivity region of the semiconductor substrate, wherein the wiring and the well are not directly connected electrically. A CMOS type semiconductor integrated circuit device with a long and wide area wiring is realized which can effectively suppress damage to a gate oxide film of a MOSFET.

REFERENCES:
patent: 5285082 (1994-02-01), Axer
patent: 5406105 (1995-04-01), Lee
patent: 5760630 (1998-06-01), Okamoto

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