MOS Integrated with implanted resistor elements

Details MOS Integrated with implanted resistor elements MOS Integrated with implanted resistor elements

1978-08-18

1980-07-08

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

357 91, 365178, G11C 1140

Patent

active

042120837

ABSTRACT:
Resistor elements for MOS integrated circuits are made by an ion implant step compatable with a self-aligned N-channel silicon-gate process. The resistor elements are beneath the field oxide in the finished device, although the implant step is prior to formation of the thick oxide. Resistors of this type are ideally suited for load devices in static RAM cells.

REFERENCES:
patent: 3889358 (1975-06-01), Bierhenke
patent: 3946369 (1976-03-01), Pashley
Fang et al., Ion Implanted, Bidirectional High Voltage Metal-Oxide-Semiconductor-Field-Effect-Transistor, IBM Tech. Disc. Bul., vol. 15, No. 12, 5/73, p. 3884.

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