MOS gated device with self aligned cells

Details MOS gated device with self aligned cells MOS gated device with self aligned cells

1999-11-03

2000-11-07

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, H01L 2976, H01L 2994

Patent

active

061440655

ABSTRACT:
An MOS-gated power semiconductor device is formed by a process in which a self-aligned device cell is formed without any critical alignments. A sidewall spacer is used to mask the etching of a depression in the silicon to reduce the number of critical alignment steps. An optional selectively formed metal connects the polysilicon layer to the P+ and N+ diffusion regions. The sidewall spacer, in combination with the selectively formed metal, prevents impurities from diffusing to the parasitic DMOS channels and inverting them to cause leakage. A termination structure may also be formed by this process.

REFERENCES:
patent: 4757025 (1988-07-01), Bender
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4960723 (1990-10-01), Davies
patent: 5040045 (1991-08-01), McArthur et al.
patent: 5155052 (1992-10-01), Davies
patent: 5173435 (1992-12-01), Harada
patent: 5234851 (1993-08-01), Korman et al.
patent: 5304837 (1994-04-01), Hierold
patent: 5342797 (1994-08-01), Sapp et al.
patent: 5404040 (1995-04-01), Hshieh et al.
patent: 5426320 (1995-06-01), Zambrano
patent: 5602055 (1997-02-01), Nicholls et al.
patent: 5631187 (1997-05-01), Phipps et al.
patent: 5631484 (1997-05-01), Tsoi et al.
patent: 5677562 (1997-10-01), Korwin-Pawlowski et al.
patent: 5825065 (1998-10-01), Gerst et al.

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