MOS field effect transistor with an improved lightly doped diffu

Details MOS field effect transistor with an improved lightly doped diffu MOS field effect transistor with an improved lightly doped diffu

1998-07-24

2000-12-05

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, H01L 2976

Patent

active

06157063&

ABSTRACT:
A lightly-doped diffusion layer structure is formed under a side wall insulator on a side wall of a gate electrode of a MOS field effect transistor, wherein a side wall spacer layer is provided on an interface between the side wall of the gate electrode and the side wall insulator, and an inside edge of the lightly-doped diffusion layer is positioned under the side wall spacer layer so that the inside edge of the lightly-doped diffusion layer is positioned inside of the side wall insulator and outside of the gate electrode.

REFERENCES:
patent: 5319232 (1994-06-01), Pfiester
patent: 5422506 (1995-06-01), Zamapian
patent: 5472896 (1995-12-01), Chen et al.
patent: 5521411 (1996-05-01), Chen et al.
patent: 5726479 (1998-03-01), Matsumoto et al.
patent: 5747852 (1998-05-01), Chang et al.
patent: 5780896 (1998-07-01), Ono
patent: 5847428 (1998-12-01), Fulford, Jr. et al.
patent: 5900666 (1999-05-01), Gardner et al.

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