MOS field effect transistor and manufacture method thereof

Details MOS field effect transistor and manufacture method thereof MOS field effect transistor and manufacture method thereof

2005-04-29

2008-11-25

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21415

Reexamination Certificate

active

07456473

ABSTRACT:
A method of manufacturing an MOS field effect transistor, which achieves a faster operation and lower power consumption by using a thin film SOI structure, is provided. The method of manufacturing an MOS field effect transistor to be formed on a semiconductor substrate having a channel layer on a buried oxide film, comprises the steps of forming: a gate electrode on the semiconductor substrate via a gate oxide film; forming a first sidewall which covers a side wall of the gate electrode; forming a box oxide film by etching the buried oxide film; and forming a second sidewall which covers a side wall of the box oxide film in such a way that the second sidewall extends downward along the side wall of the box oxide film.

REFERENCES:
patent: 6437404 (2002-08-01), Xiang et al.
patent: 5-160404 (1993-06-01), None
patent: 2003-174161 (2003-06-01), None

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