Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-16
2007-10-16
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S362000, C257S402000, C257S403000
Reexamination Certificate
active
11172696
ABSTRACT:
A high-reliable depletion-type MOS field-effect transistor as a process monitor is provided. A diode formed in polycrystalline silicon and a diode formed in a semiconductor substrate form a bi-directional diode. The bi-directional diode connects a gate electrode with the semiconductor substrate in the depletion-type MOS field-effect transistor through metal wirings.
REFERENCES:
patent: 3999212 (1976-12-01), Usuda
patent: 5536958 (1996-07-01), Shen et al.
Adams & Wilks
Seiko Instruments Inc.
Vu Hung
LandOfFree
MOS field-effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOS field-effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS field-effect transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3848413