MOS Dynamic random access memory having an improved sensing circ

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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Details

307238, 365203, 365208, 365149, G11C 706, G11C 1124, G11C 1140

Patent

active

040694747

ABSTRACT:
In a memory circuit, first and second bit line portions, each having a plurality of memory cells coupled thereto are provided for reading and writing electrical potentials into and out of the coupled memory cells. A bistable flip-flop type sensing amplifier is coupled between the first and second bit portion for sensing the voltage difference therebetween and for latching into one of the two states in response to sensing either a "0" or a "1" accessed to one of the bit line portions from an addressed memory cell to be read out of the memory. A high input impedance amplifier is provided between the respective bit line portion and the respective input terminal of the sensing amplifier for isolating (buffering) the stray capacitance of the sensing amplifier circuit from the capacitance of its bit line. Switchable restore circuitry bypasses each of the isolating line amplifiers for the purposes of restoring electrical potentials read out of the addressed memory cells. In a preferred embodiment, the buffer line amplifiers comprise source follower amplifiers.

REFERENCES:
patent: 3760381 (1973-09-01), Yao
patent: 3838295 (1974-09-01), Lindell
patent: 3992704 (1976-11-01), Kantz
patent: 4004284 (1977-01-01), Heeren

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