MOS dynamic random access memory

Details MOS dynamic random access memory MOS dynamic random access memory

1984-12-13

1986-12-09

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Capacitors

365230, G11C 1124, G11C 800

Patent

active

046284869

ABSTRACT:
In a MOS-dRAM formed by integrating memory cells each formed of an MOS capacitor and an MOSFET, a D-type transistor with a threshold voltage lower than that of MOSFETs of peripheral circuits is used for the MOSFET of each memory cell. Thus, a word line driver without a pull-up circuit can be used, permitting high-speed access of the MOS-dRAM.

REFERENCES:
patent: 3387286 (1968-06-01), Mitake et al.
patent: 3986180 (1976-10-01), Cade
patent: 4298960 (1981-11-01), Dennard

Affiliated with

Also associated with

Rating

MOS dynamic random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS dynamic random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS dynamic random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1389675