MOS devices having improved threshold match

Details MOS devices having improved threshold match MOS devices having improved threshold match

1990-12-27

1991-08-13

James, Andrew J.

Fishing, trapping, and vermin destroying

357 231, 357 22, 357 41, 437 29, 437 36, 437 41, H01L 2701, H01L 2900, H01L 2978, H01L 2910

Patent

active

050400355

ABSTRACT:
In certain circuits, it is desirable to match the electrical characteristics, (e.g., thresholds), of two (or more) MOS transistors. For example, in an ECL output buffer, a first transistor is a voltage reference, and a second transistor is an output buffer controlled by this voltage reference. However, the orientation of the transistors may affect their electrical characteristics. This may be due to the source/drain ion implantation step that occurs at an angle off the vertical, or other processing effects. The present invention provides symmetrical MOS transistors having characteristics that are independent of orientation. For example, a square gate layout provides both vertical and horizontal current components, thereby obtaining 90 degree rotational symmetry.

REFERENCES:
patent: 4636825 (1987-01-01), Baynes
patent: 4748487 (1988-05-01), Uchida et al.
"Some Consequences of Ion Beam Shadowing in CMOS Source/Drain Formation", by R. W. Gregor, IEEE Electron Device Letters, vol. EDL-7, No. 12, Dec. 1986, pp. 677-679.
"HEXFET, A New Power Technology, Cuts On-Resistance, Boosts Ratings", Electronic Design 12, Jun. 7, 1979, pp. 36-40.

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