MOS device with varying trench depth

Details MOS device with varying trench depth MOS device with varying trench depth

2011-05-24

2011-05-24

Tran, Thein F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000

Reexamination Certificate

active

07948029

ABSTRACT:
A semiconductor device includes a drain, an epitaxial layer overlaying the drain, a body disposed in the epitaxial layer, a source embedded in the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source, the active region contact trench having a varying contact trench depth, and an active region contact electrode disposed within the active region contact trench.

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