MOS device having a source/drain region conforming to a conducti

Details MOS device having a source/drain region conforming to a conducti MOS device having a source/drain region conforming to a conducti

1997-07-07

1999-09-07

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257288, 257236, 257396, 257397, 257398, 257399, 257400, 257344, 438300, 438262, 438301, 438305, 438390, H01L 754

Patent

active

059491167

ABSTRACT:
A MOS device and method of fabricating the same, wherein the source/drain region has polysilicon trench structure which are formed by self-alignment using silicon oxide layers as masks. The source/drain regions extend to the field oxide layer and/or above the gate. Therefore, contacts can be formed on source/drain conductive regions above the field oxide layer.

REFERENCES:
patent: 3853633 (1974-12-01), Armstrong
patent: 4135955 (1979-01-01), Gasner et al.
patent: 4789644 (1988-12-01), Meda
patent: 5198378 (1993-03-01), Rodder et al.
patent: 5548145 (1996-08-01), Hamamoto et al.

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