Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-04
2006-04-04
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S321000, C257S365000, C257S377000, C438S257000, C438S258000, C438S266000
Reexamination Certificate
active
07023047
ABSTRACT:
An MOS device has a stack and a passivation layer covering the stack. The stack is formed by a first polysilicon region and by a second polysilicon region arranged on top of one another and separated by an intermediate dielectric region. An electrical connection region, formed by a column structure substantially free of steps, extends through the passivation layer, the second polysilicon region and the intermediate dielectric region, and terminates in contact with the first polysilicon region so as to electrically contacting the first polysilicon region and the second polysilicon region. Fabrication of the electrical connection region requires just one mask.
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U.S. Appl. No. 10/745,297, filed Dec. 23, 2003, Caimi et al.
Caimi Carlo
Caprara Paolo
Contin Valentina Tessa
Merlani Davide
Han Hai
Jorgenson Lisa K.
Kang Donghee
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
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