Mos device and method of fabricating the same

Details Mos device and method of fabricating the same Mos device and method of fabricating the same

1996-11-19

1999-10-19

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257354, 257369, H01L 2701

Patent

active

059693886

ABSTRACT:
An MOS device including a p-channel semiconductor device and an n-channel semiconductor device, which are formed on top of an SOI substrate consisting of a supporting substrate, an insulation film, and a semiconductor layer patterned in a plurality of islands. In the peripheral region of respective islands of the semiconductor layer, boundary films, thicker than respective gate oxide films, are formed, and a boundary film formed on the semiconductor layer for the n-channel semiconductor device is thinner than another boundary film formed on the semiconductor layer for the p-channel semiconductor device. A field doped layer 11 may be preferably provided in the peripheral region of the semiconductor layer of the n-channel semiconductor device 41. In the MOS device fabricated as above, leakage current that occurs in a parasitic MOS region in an environment under exposure to radiation is reduced, ensuring stable operation.

REFERENCES:
patent: 5291052 (1994-03-01), Kim et al.
patent: 5739574 (1998-04-01), Nakamura

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