Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-04-30
2000-10-24
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257401, 257412, H01L 2976
Patent
active
061371416
ABSTRACT:
A metal-oxide-semiconductor (MOS) device in which the nonuniform dopant concentration in the channel region is obtained by means of ion implantation through a polysilicon gate electrode of nonuniform cross section, which is itself obtained by oxidizing the polysilicon using a semirecessed LOCOS process. The present invention is directed most generally to a semiconductor device which includes: a semiconductor substrate of a first conductivity type; a gate insulator on the substrate, the gate insulator sharing an interface with the substrate; a gate electrode on the gate insulator, the gate electrode having a first side, a second side, and a middle region between the first and second sides; a source doped region of a second conductivity type within the substrate to the first side of the gate electrode and a drain doped region of the second conductivity type within the substrate to the second side of the gate electrode, the source and drain doped regions self-aligned to the gate electrode; and a channel doped region of the first conductivity type within the substrate below the gate electrode, the channel doped region having a peak dopant concentration profile such that the peak dopant concentration under the middle region of the gate electrode occurs further below the gate insulator-substrate interface than does either the peak dopant concentration under the first side of the gate electrode or the peak dopant concentration under the second side of the gate electrode.
REFERENCES:
patent: 5166765 (1992-11-01), Lee et al.
patent: 5448094 (1995-09-01), Hsu
patent: 5449937 (1995-09-01), Arimura et al.
patent: 5512770 (1996-04-01), Hong
patent: 5895954 (1999-04-01), Yasumura et al.
patent: 5929495 (1999-07-01), Dennison et al.
Huh Ki Jae
Son Jeong Hwan
LG Semicon Co. Ltd.
Prenty Mark V.
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