Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-15
2006-08-15
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S773000
Reexamination Certificate
active
07091570
ABSTRACT:
A MOS device has: a semiconductor body defining a surface; a stack on top of the semiconductor body; and a passivation layer on top of the semiconductor body and covering the stack. The stack is formed by a first polysilicon region and by a second polysilicon region arranged on top of one another and separated by an intermediate dielectric region. An electrical connection region extends through the passivation layer as far as the surface of the semiconductor body laterally with respect to, and in contact with, the first and the second polysilicon regions so as to contact them electrically.
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Caimi Carlo
Caprara Paolo
Contin Valentina Tessa
Merlani Davide
Han Hai
Jorgenson Lisa K.
Prenty Mark V.
STMicroelectronics S.r.l.
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