MOS-controlled power semiconductor component

Details MOS-controlled power semiconductor component MOS-controlled power semiconductor component

1994-02-08

1995-09-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257358, 257363, 257328, 257646, 257651, H01L 2906, H01L 2978

Patent

active

054499380

ABSTRACT:
A power semiconductor component having integrated protection against electrostatic destruction is published. Such a semiconductor component (1) comprises a semiconductor substrate (10) having at least one MOS structure whose gate (7) is arranged insulated from the semiconductor substrate (10). Such structures are susceptible to destruction by a dielectric breakdown of the insulation layer, caused by electrostatic charging. According to the invention, this insulating layer between-the gate electrode (3) and the main electrode (2) is now replaced by a semi-insulating layer (9) so that a limited current flow becomes possible between the gate (7) and the main electrode (2) and it is no longer possible for any potential difference to build up.

REFERENCES:
patent: 4375125 (1983-03-01), Byatt
patent: 4492974 (1985-01-01), Yoshida et al.
patent: 4618871 (1986-10-01), Mitlehner
patent: 4963970 (1990-10-01), Throngnumchai et al.
patent: 5220443 (1993-06-01), Noguchi
patent: 5324971 (1994-06-01), Notley
Proceedings of the IEEE, vol. 76, No. 4, B. Jayant Baliga, "Evolution of MOS-Bipolar Power Semiconductor Technology", Apr. 1988, pp. 409-418.
IEEE Transactions on Electron Devices, vol. ED-33, No. 10, Victor A. K. Temple, "MOS-Controlled Thyristors-A New Class of Power Devices", Oct. 1986, pp. 1609-1617.

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