MOS circuit stabilization of bipolar current mirror collector vo

Electricity: power supply or regulation systems – Self-regulating – Using a three or more terminal semiconductive device as the...

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323315, G05F 316

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active

060022434

ABSTRACT:
A reference circuit including a current generation circuit having a first bipolar transistor and a second bipolar transistor connected as a bipolar current mirror and being coupled by way of their emitters and collectors between a voltage source and ground. A MOS circuit is also provided functioning to minimize the voltage difference between the collector of the first bipolar transistor and the second bipolar transistor. In this way, by stabilizing the differences between the voltages at the collector of the first bipolar transistor and at the collector of the second bipolar transistor, the aforementioned problems, i.e., the variations in the output voltage and/or current of the bandgap reference circuit in response to variations in the voltage source, are greatly reduced.

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A.G. Van Lienden, G.C.M. Meijer and J. Van Drecht, "Latch-Up in Bipolar Low-Voltage Current Sources," IEEE Journal of Solid-State Circuits, vol. SC-22, No. 6, Dec. 1987, pp. 1139-1143.

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