MOS channel device with counterdoping of ion implant for reduced

Details MOS channel device with counterdoping of ion implant for reduced MOS channel device with counterdoping of ion implant for reduced

1995-09-29

1996-08-20

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, 257376, 257402, 257403, 257590, 257657, 257917, H01L 2976

Patent

active

055481485

ABSTRACT:
An N-channel and P-channel MOSFET include counterdoping of a threshold voltage (V.sub.T) ion implant for reducing substrate sensitivity and source/drain junction capacitance. An arsenic (As) compensated boron (B) implant is provided in the N-channel MOSFET. A boron (B) compensated arsenic (As) implant is provided in the P-channel MOSFET.

REFERENCES:
patent: 4027380 (1977-06-01), Deal et al.
patent: 4108686 (1978-08-01), Jacobus, Jr.
patent: 4521796 (1985-06-01), Rajkanan et al.
patent: 5073509 (1991-12-01), Lee
patent: 5091324 (1992-02-01), Hsu et al.
patent: 5141882 (1992-08-01), Komori et al.
Carlson et al., "Reduced Substrate Sensitivity in Field-Effect Transistors," IBM Technical Disc. Bulletin, vol. 16, No. 3, pp. 1022-1023, Aug. 1973.
Dally et al., "Sub-Micron Channel Length CMOS Technology," IBM Technical Disclosure Bulletin, vol. 33, No. 4, pp. 227-232, Sep. 1990.
Chao et al., "Fabrication Procedure for MOSFET Logic Integrated Circuit with Very Thin Gate Oxide." IBM Technical Disclosure Bulletin, vol. 22, No. 11, pp. 5152-5123, Apr. 1980.

Affiliated with

Also associated with

Rating

MOS channel device with counterdoping of ion implant for reduced does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS channel device with counterdoping of ion implant for reduced, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS channel device with counterdoping of ion implant for reduced will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2332130