Mos capacitor, Vpp switch circuit, charge pump circuit, eeprom,

Details Mos capacitor, Vpp switch circuit, charge pump circuit, eeprom, Mos capacitor, Vpp switch circuit, charge pump circuit, eeprom,

1995-03-21

1996-06-25

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257307, H01L 27108, H01L 2976, H01L 31119, H01L 2994

Patent

active

055302742

ABSTRACT:
An MOS capacitor includes a semiconductor substrate having at its surface at least one field-forming section; an insulating film on the surface of the semiconductor substrate covering the field-forming section and having at least an opening within the field-forming section; a conducting layer on the insulating film and having an opening formed at the opening in the insulating film; a first electrode layer electrically connected to the conducting layer; and a second electrode layer passing through the opening in the conducting layer and the opening in the insulating film and electrically connected to the surface of the semiconductor substrate. Since the second electrode layer passes through the opening in the conducting layer and the opening in the insulating film and is electrically connected to the surface of the semiconductor substrate at an inner portion of the field-forming section, resistance is decreased and frequency characteristics are improved.

REFERENCES:
patent: 3704384 (1972-11-01), DeSimone et al.
patent: 4223333 (1980-09-01), Masuoka
patent: 4768828 (1988-11-01), Hoffman
patent: 5282159 (1994-01-01), Ueda et al.
Nikkei Electronics, 1986, pp. 133-144.

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