Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-27
2007-03-27
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S401000, C438S199000, C438S275000
Reexamination Certificate
active
10965856
ABSTRACT:
A semiconductor device in which a dielectric breakdown of a gate oxide in a MOS capacitor can be prevented and in which a circuit area can be reduced. The semiconductor device comprises an NMOS transistor a gate of which is connected to a terminal VDD on a high potential side and a PMOS transistor a gate of which is connected to a terminal GND on a low potential side, source/drain (S/D) regions of the NMOS transistor and source/drain (S/D) regions of the PMOS transistor being electrically connected.
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Kihara Fukuji
Morishita Tomonari
Nunokawa Hideo
Tachibana Suguru
Arent & Fox LLP
Fujitsu Limited
Huynh Andy
Taylor Earl N.
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