Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-21
2010-11-02
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29345
Reexamination Certificate
active
07825447
ABSTRACT:
A capacitor capable of functioning as a capacitor even when an AC voltage is applied thereto is provided without increasing the manufacturing steps of a semiconductor device. A transistor is used as a MOS capacitor where a pair of impurity regions formed on opposite sides of a channel formation region are each doped with impurities of different conductivity so as to be used as a source region or a drain region. Specifically, assuming that an impurity region that is doped with N-type impurities is referred to as an N-type region while an impurity region that is doped with P-type impurities is referred to as a P-type region, a transistor is provided where a channel formation region is interposed between the N-type region and the P-type region, which is used as a MOS capacitor.
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International Search Report (Application No. PCT/JP2005/008087) Dated Aug. 23, 2005.
Written Opinion (Application No. PCT/JP2005/008087) Dated Aug. 23, 2005.
Kato Kiyoshi
Shionoiri Yutaka
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Sandvik Benjamin P
Semiconductor Energy Laboratory Co,. Ltd.
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