MOS/bipolar device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Patent

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Details

257327, 257329, 257488, 257655, H01L 2702, H01L 2978

Patent

active

054401640

ABSTRACT:
An integrated device is provided which has a bipolar transistor as an output stage. The bipolar transistor is driven by a short channel metal oxide semiconductor field effect transistor. Such a device has a low on state voltage drop substantially irrespective of the potential supported by the device.

REFERENCES:
patent: 5101257 (1992-03-01), Hayden et al.
patent: 5245202 (1993-09-01), Yasukazu
patent: 5247200 (1993-09-01), Momose et al.

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