Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-01-04
2011-01-04
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S789000, C257SE21478, C257SE21493
Reexamination Certificate
active
07863203
ABSTRACT:
This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.
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Baum Thomas H.
Wang Ziyun
Xu Chongying
Advanced Technology & Materials Inc.
Chappi Margaret
Everhart Caridad M
Hultquist Steven J.
Hultquist IP
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